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PN147

更新时间: 2024-11-20 06:04:31
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 83K
描述
Silicon planar type

PN147 技术参数

生命周期:Obsolete包装说明:LTTLW102-001, 2 PIN
Reach Compliance Code:unknownHTS代码:8541.40.70.80
风险等级:5.82其他特性:DOUBLE-END
Coll-Emtr Bkdn Voltage-Min:20 V配置:SINGLE
最大暗电源:500 nA红外线范围:YES
标称光电流:3.5 mA安装特点:SURFACE MOUNT
功能数量:1最大通态电流:0.02 A
最高工作温度:85 °C最低工作温度:-25 °C
光电设备类型:PHOTO TRANSISTOR峰值波长:800 nm
最大功率耗散:0.05 W最长响应时间:0.000003 s
形状:ROUND尺寸:1.8 mm
子类别:Photo Transistors表面贴装:YES
Base Number Matches:1

PN147 数据手册

 浏览型号PN147的Datasheet PDF文件第2页浏览型号PN147的Datasheet PDF文件第3页 
Phototransistors  
PNZ147 (PN147)  
Silicon planar type  
Unit: mm  
For optical control systems  
Type number : cathode mark (Green)  
ꢀ±.± min.  
ꢀ±.± min.  
3.2±±.3  
Features  
3.2±±.3  
High sensitivity  
ꢀ.8)  
Wide spectral sensitivity characteristics, suited for detecting GaAs  
LEDs  
Fast response: tr , tf = 3 µs (typ.)  
Small size designed for easier mounting to printed circuit board  
2
°
45  
(ꢀ.8)  
(ꢀ.8)  
2.8±±.2  
R±.9  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-emitter voltage (Base open) VCEO  
Emitter-collector voltage (Base open) VECO  
20  
5
20  
V
Collector current  
IC  
mA  
mW  
°C  
1: Collector  
2: Emitter  
LTTLW102-001 Package  
Collector power dissipation  
Operating ambient temperature  
Storage temperature  
PC  
50  
Topr  
Tstg  
25 to +85  
30 to +100  
°C  
Electrical-Optical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
Conditions  
VCE = 10 V, L = 2 lx  
Min  
Typ  
12  
Max  
Unit  
µA  
mA  
µA  
nm  
°
1
2
Photocurrent *  
ICE(L)1  
3
*
ICE(L)2  
ICEO  
λp  
VCE = 10 V, L = 500 lx  
VCE = 10 V  
3.5  
0.01  
800  
24  
Dark current  
0.50  
Peak emission wavelength  
Half-power angle  
VCE = 10 V  
θ
The angle from which photocurrent  
becomes 50%  
3
Rise time *  
tr  
tf  
VCC = 10 V, ICE(L) = 5 mA, RL = 100 Ω  
3
3
10  
10  
µs  
µs  
V
3
Fall time *  
1
Collector-emitter saturation voltage *  
VCE(sat) ICE(L) = 1 mA, L = 1000 lx  
0.2  
0.5  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.  
3. This device is designed be disregarded radiation.  
5. 1: Source: Tungsten (color temperature 2856 K)  
*
2: Rank classification  
*
Rank  
Q
R
S
ICE(L) (µA)  
3.0 to 11.0  
7.0 to 24.0  
>16.0  
3: Switching time measurement circuit  
*
Sig. in  
VCC  
tr: Rise time  
tf: Fall time  
(Input pulse)  
90%  
10%  
Sig. out  
(Output pulse)  
50  
RL  
tr  
tf  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: April 2004  
SHE00017BED  
1

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