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PN120SQL

更新时间： 2024-11-18 23:28:55

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描述
PHOTOTRANSISTOR \| NPN \| 800NM PEAK WAVELENGTH \| 20M \| DOME-3.0

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PN120SQL 数据手册

Phototransistors

PNZ120S (PN120S)

Silicon NPN Phototransistor

Unit : mm

ø3.0 0.2

For optical control systems

Can be combined with LN62S to form an optical controller

Features

High sensitivity

Wide directional sensitivity for easy use

Fast response : t_r, t_f= 3 µs (typ.)

Small size (ø 3) ceramic package

ø0.3 0.05

ø0.45 0.05

0.9 0.15

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

V_CEO

V_ECO

I_C

Ratings

Unit

Collector to emitter voltage

Emitter to collector voltage

Collector current

1: Emitter

2: Collector

˚C

Collector power dissipation

Operating ambient temperature

Storage temperature

P_C

T_opr

–25 to +85

–30 to +100

T_stg

˚C

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Dark current

Symbol

I_CEO

Conditions

min

typ

max

Unit

µA

deg.

µs

V_CE= 10V

500

I_CE(L)1

I_CE(L)2

λ_P

V_CE= 10V, L = 2 lx^*1

V_CE= 10V, L = 500 lx^*1

Collector photo current

Peak sensitivity wavelength

Acceptance half angle

Response time

V_CE= 10V

800

Measured from the optical axis to the half power point

V_CC= 10V, I_CE(L)= 5mA, R_L= 100Ω

t_r, t_f^*2

Collector saturation voltage

V_CE(sat)I_CE(L)= 1mA, L = 1000 lx^*1

0.2

0.5

^*1Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.

^*2Switching time measurement circuit

Sig.IN

V_CC

t_d: Delay time

(Input pulse)

t_r: Rise time (Time required for the collector photo current to

increase from 10% to 90% of its final value)

90%

10%

Sig.OUT

(Output pulse)

t_d

t_f: Fall time (Time required for the collector photo current to

decrease from 90% to 10% of its initial value)

50Ω

R_L

t_r

t_f

Classifications

Class

CE(L)

I_CE(L)1(µA)

I_{CE(L) 2}(mA)

3 to 16

5 typ.

10 to 30

6 typ.

>24

8 typ.

Note) The part number in the parenthesis shows conventional part number.

12 3

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