Datasheet > PMV450ENEA

PMV450ENEA

更新时间： 2024-11-06 11:10:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
16页	727K
描述
60 V, N-channel Trench MOSFETProduction

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PMV450ENEA 数据手册

PMV450ENEA

60 V, N-channel Trench MOSFET

23 March 2016

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

Logic level compatible

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

•

3. Applications

Relay driver

•

High-speed line driver

Low-side loadswitch

Switching circuits

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-20

V_GS= 10 V; T_amb= 25 °C

[1]

0.8

Static characteristics

R_DSondrain-source on-state

V_GS= 10 V; I_D= 0.9 A; T_j= 25 °C

300

380

mΩ

resistance

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm².

[1]

12 3 4 5 6 7...16

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