Datasheet > PMV42ENER

PMV42ENER

更新时间： 2024-11-05 22:59:07

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描述
MOSFET N-CH 30V TO-236AB

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PMV42ENER 数据手册

PMV42ENE

30 V, N-channel Trench MOSFET

16 March 2016

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

Logic level compatible

Low on-state resistance

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 1 kV HBM

Enhanced power dissipation capability of 1 W

•

3. Applications

Relay driver

•

High-speed line driver

Low-side loadswitch

Switching circuits

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

V_GS

I_D

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

-20

V_GS= 10 V; T_amb= 25 °C; t ≤ 5 s

V_GS= 10 V; I_D= 4.4 A; T_j= 25 °C

[1]

5.1

Static characteristics

R_DSondrain-source on-state

mΩ

resistance

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm².

[1]

12 3 4 5 6 7...17

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