Datasheet > PMV37EN

PMV37EN

更新时间： 2024-09-16 12:30:59

品牌	Logo	应用领域
TYSEMI		晶体驱动器开关晶体管光电二极管 PC
页数	文件大小	规格书
3页	377K
描述
30 V, 3.1 A N-channel Trench MOSFET High-speed line driver Switching circuits

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PMV37EN 数据手册

Product specification

PMV37EN

30 V, 3.1 A N-channel Trench MOSFET

Rev. 1 — 9 May 2011

Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small

SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

1.2 Features and benefits

 Logic-level compatible

 Very fast switching

 Trench MOSFET technology

1.3 Applications

 Relay driver

 Low-side load switch

 Switching circuits

 High-speed line driver

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-20

[1]

I_D

V_GS= 10 V; T_amb= 25 °C

3.1

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 3.1 A; T_j= 25 °C

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².

2. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

gate

source

drain

mbb076

SOT23 (TO-236AB)

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sales@twtysemi.com

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