Datasheet > PMV33UPE,215

PMV33UPE,215

更新时间： 2024-09-16 22:58:23

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
15页	1599K
描述
MOSFET P-CH 20V 4.4A TO-236AB

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PMV33UPE,215 数据手册

PMV33UPE

20 V, single P-channel Trench MOSFET

Rev. 1 — 12 June 2012

Product data sheet

1. Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

1.2 Features and benefits

 Low threshold voltage

 Very fast switching

 Trench MOSFET technology

 2 kV ESD protected

1.3 Applications

 Relay driver

 High-side loadswitch

 Switching circuits

 High-speed line driver

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

-20

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-8

[1]

I_D

V_GS= -4.5 V; T_amb= 25 °C; t ≤ 5 s

-5.3

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= -4.5 V; I_D= -3 A; T_j= 25 °C

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².

12 3 4 5 6 7...15

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