Datasheet > PMV13XN

PMV13XN

更新时间： 2024-03-03 10:09:45

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	281K
描述
30 V, N-channel Trench MOSFETProduction

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PMV13XN 数据手册

PMV13XN

30 V, N-channel Trench MOSFET

12 July 2023

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted

Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

•

Low threshold voltage

•

Very fast switching

Trench MOSFET technology

3. Applications

•

Relay driver

High-speed line driver

Low-side load switch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-12

I_D

V_GS= 4.5 V; T_amb= 25 °C; t ≤ 5 s

V_GS= 4.5 V; I_D= 7 A; T_j= 25 °C

[1]

8.2

Static characteristics

R_DSondrain-source on-state

resistance

13.5

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm².

12 3 4 5 6 7...14

下载PDF

与PMV13XN相关器件

型号	品牌	描述	获取价格	数据表
PMV13XNEA	NEXPERIA	20 V, N-channel Trench MOSFETProduction	获取价格
PMV1-4RB	PANDUIT	2 PC VINYL INSULATED METRIC RINGS 0.5-1.5MM BARREL	获取价格
PMV15ENE	NEXPERIA	30 V, N-channel Trench MOSFETProduction	获取价格
PMV15ENEA	NEXPERIA	30 V, N-channel Trench MOSFETProduction	获取价格
PMV1-5RB	PANDUIT	2 PC VINYL INSULATED METRIC RINGS 0.5-1.5MM BARREL	获取价格
PMV1-5RB-CY	PANDUIT	2 PC VINYL INSULATED METRIC RINGS 0.5-1.5MM BARREL	获取价格