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PMEG6020ETR PDF预览

PMEG6020ETR

更新时间: 2024-10-28 11:13:19
品牌 Logo 应用领域
安世 - NEXPERIA 功效光电二极管
页数 文件大小 规格书
14页 287K
描述
High temperature 60 V, 2 A low VF Schottky barrier rectifierProduction

PMEG6020ETR 数据手册

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PMEG6020ETR  
High temperature 60 V, 2 A low VF Schottky barrier rectifier  
1 January 2023  
Product data sheet  
1. General description  
Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in  
a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package.  
2. Features and benefits  
Average forward current: IF(AV) ≤ 2 A  
Reverse voltage: VR ≤ 60 V  
Low forward voltage  
High power capability due to clip-bonding technology  
Small and flat lead SMD plastic package  
High temperature Tj ≤ 175 °C  
3. Applications  
Low voltage rectification  
High efficiency DC-to-DC conversion  
Switch mode power supply  
Reverse polarity protection  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
IF(AV)  
average forward  
current  
δ = 0.5; f = 20 kHz; square wave; Tsp  
165 °C  
-
-
2
A
VR  
VF  
IR  
reverse voltage  
forward voltage  
reverse current  
Tj = 25 °C  
-
-
-
-
60  
V
IF = 2 A; Tj = 25 °C  
460  
60  
530  
150  
mV  
µA  
VR = 60 V; tp ≤ 300 µs; δ ≤ 0.02;  
Tj = 25 °C; pulsed  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
Description  
cathode[1]  
anode  
Simplified outline  
Graphic symbol  
K
A
K
A
1
2
2
sym001  
CFP3 (SOD123W)  
[1] The marking bar indicates the cathode.  
 
 
 
 
 
 

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