Datasheet > PMEG6020ETR

PMEG6020ETR

更新时间： 2024-10-28 11:13:19

品牌	Logo	应用领域
安世 - NEXPERIA		功效光电二极管
页数	文件大小	规格书
14页	287K
描述
High temperature 60 V, 2 A low VF Schottky barrier rectifierProduction

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PMEG6020ETR 数据手册

PMEG6020ETR

High temperature 60 V, 2 A low VF Schottky barrier rectifier

1 January 2023

Product data sheet

1. General description

Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in

a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Average forward current: I_F(AV)≤ 2 A

•

Reverse voltage: V_R≤ 60 V

Low forward voltage

High power capability due to clip-bonding technology

Small and flat lead SMD plastic package

High temperature T_j≤ 175 °C

3. Applications

•

Low voltage rectification

High efficiency DC-to-DC conversion

Switch mode power supply

Reverse polarity protection

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

I_F(AV)

average forward

current

δ = 0.5; f = 20 kHz; square wave; T_sp

165 °C

≤

V_R

V_F

I_R

reverse voltage

forward voltage

reverse current

T_j= 25 °C

I_F= 2 A; T_j= 25 °C

460

530

150

µA

V_R= 60 V; t_p≤ 300 µs; δ ≤ 0.02;

T_j= 25 °C; pulsed

5. Pinning information

Table 2. Pinning information

Symbol

Description

cathode[1]

anode

Simplified outline

Graphic symbol

sym001

CFP3 (SOD123W)

[1] The marking bar indicates the cathode.

12 3 4 5 6 7...14

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