Datasheet > PMD1702K

PMD1702K

更新时间： 2024-11-25 12:20:35

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	215K
描述
isc Silicon PNP Darlingtion Power Transistor

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PMD1702K 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlingtion Power Transistor

PMD1702K

DESCRIPTION

·High DC current gain

·Collector-Emitter Breakdown Voltage-

_(BR)CEO= -80V(Min)

·Complement to type PMD1602K

APPLICATIONS

·Designed for general purpose amplifier and low frequency

switching applications

ABSOLUTE MAXIMUM RATINGS(T_C=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-80

UNIT

-80

-5.0

Collector Current -Continuous

Collector Current-Peak

Base Current

-20

I_CP

-40

I_B

-0.5

P_C

Collector Power Dissipation@T_C=25℃

Junction Temperature

180

℃

150

T_j

Storage Temperature

-65~200

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

ThermalResistance, Junction to Case

0.97

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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