Datasheet > PMD16K60

PMD16K60

更新时间： 2024-11-25 06:04:23

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	118K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

技术参数
数据手册

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PMD16K60 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.56
Base Number Matches：	1

PMD16K60 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

PMD16K60/80/100

DESCRIPTION

·With TO-3 package

·High DC current gain

·DARLINGTON

APPLICATIONS

·Designed for use in power switching

application.

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

PMD16K60

PMD16K80

PMD16K100

PMD16K60

PMD16K80

PMD16K100

V_CBO

Collector-base voltage

Open emitter

100

V_CEO

Collector-emitter voltage

Open base

100

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Collector current(peak)

Base current

Open collector

0.5

P_D

T_j

Power dissipation

T_C=25℃

200

-65~200

℃

Max. operating Junction temperature

Storage temperature

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance from junction to case

MAX

UNIT

R_{th j-c}

0.875

℃/W

12 3

中文翻译

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