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PMD13K100 PDF预览

PMD13K100

更新时间: 2024-11-25 06:04:23
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管局域网
页数 文件大小 规格书
2页 193K
描述
Silicon PNP Darlingtion Power Transistor

PMD13K100 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Is Samacsys:NBase Number Matches:1

PMD13K100 数据手册

 浏览型号PMD13K100的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Darlingtion Power Transistor  
PMD13K100  
DESCRIPTION  
·High DC current gain  
·Collector-Emitter Breakdown Voltage-  
V
(BR)CEO= -100V(Min)  
·Complement to type PMD12K100  
APPLICATIONS  
·Designed for general purpose amplifier and DC motor control  
applications.  
ABSOLUTE MAXIMUM RATINGS(TC=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
-100  
-100  
-5.0  
UNIT  
V
V
V
Collector Curren-Continuous  
Collector Current-Peak  
Base Current  
-8  
A
ICP  
-16  
A
IB  
-0.12  
100  
A
PC  
Collector Power Dissipation@TC=50  
Junction Temperature  
W
150  
Tj  
Storage Temperature  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
ThermalResistance, Junction to Case  
1.5  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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