Datasheet > PMD12K100

PMD12K100

更新时间： 2024-11-25 06:04:23

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	193K
描述
Silicon NPN Darlingtion Power Transistor

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中文翻译

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数据手册

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PMD12K100 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlingtion Power Transistor

PMD12K100

DESCRIPTION

·High DC current gain

·Collector-Emitter Breakdown Voltage-

_(BR)CEO= 100V(Min)

·Complement to type PMD13K100

APPLICATIONS

·Designed for general purpose amplifier and DC motor control

applications.

ABSOLUTE MAXIMUM RATINGS(T_C=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

100

UNIT

100

5.0

Collector Current -Continuous

Collector Current-Peak

Base Current

I_CP

I_B

0.12

100

P_C

Collector Power Dissipation@T_C=50℃

Junction Temperature

℃

150

T_j

Storage Temperature

-65~200

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

ThermalResistance, Junction to Case

1.5

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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