Datasheet > PMCXB290UE

PMCXB290UE

更新时间： 2024-03-03 10:10:17

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
19页	366K
描述
20 V, complementary N/P-channel Trench MOSFETProduction

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PMCXB290UE 数据手册

PMCXB290UE

20 V, complementary N/P-channel Trench MOSFET

30 May 2023

Product data sheet

1. General description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra

small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

•

Low threshold voltage

•

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection typically > 2 kV HBM

3. Applications

•

Relay driver

High-speed line driver

Level shifter

Power management in battery-driven portables

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR1 (N-channel), Static characteristics

R_DSon

drain-source on-state

resistance

V_GS= 4.5 V; I_D= 1.2 A; T_j= 25 °C

270

320

mΩ

TR2 (P-channel), Static characteristics

R_DSon

drain-source on-state

resistance

V_GS= -4.5 V; I_D= -1.2 A; T_j= 25 °C

590

770

mΩ

TR1 (N-channel)

V_DS

drain-source voltage

drain current

T_j= 25 °C

I_D

V_GS= 4.5 V; T_amb= 25 °C

[1]

930

TR2 (P-channel)

V_DS

I_D

drain-source voltage

drain current

T_j= 25 °C

-20

V_GS= -4.5 V; T_amb= 25 °C

-570

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm².

12 3 4 5 6 7...19

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