生命周期: | Active | 包装说明: | R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.72 | Is Samacsys: | N |
配置: | COMMON ANODE, 2 ELEMENTS | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 2 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
最大功率耗散: | 0.25 W | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 85 V | 最大反向恢复时间: | 0.004 µs |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PMBD2835235 | NXP |
获取价格 |
DIODE 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode | |
PMBD2835-T | NXP |
获取价格 |
DIODE 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode | |
PMBD2835TRL | YAGEO |
获取价格 |
Rectifier Diode, 2 Element, 0.1A, Silicon | |
PMBD2835TRL13 | YAGEO |
获取价格 |
Rectifier Diode, 2 Element, 0.1A, Silicon | |
PMBD2836 | NXP |
获取价格 |
High-speed double diodes | |
PMBD2836212 | NXP |
获取价格 |
DIODE 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode | |
PMBD2836235 | NXP |
获取价格 |
DIODE 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode | |
PMBD2836-T | NXP |
获取价格 |
0.215A, 85V, 2 ELEMENT, SILICON, SIGNAL DIODE | |
PMBD2836T/R | NXP |
获取价格 |
0.215A, 85V, 2 ELEMENT, SILICON, SIGNAL DIODE | |
PMBD2836TRL13 | YAGEO |
获取价格 |
Rectifier Diode, 2 Element, 0.1A, Silicon |