Datasheet > PMB118T045SS-255A

PMB118T045SS-255A

更新时间： 2024-03-03 10:11:44

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
1页	228K
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PMB118T045SS-255A

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PMB118T045SS-255A 数据手册

Wafer Datasheet

PMB118T045SS-255A

20A/45V⁽¹⁾, low VF Planar MOS barrier diode

Mechanical Data

Chip Drawing

Item

Die Size (A)

Information

2998µm

118.0 mil

113.3mil

Top Metal Pad Size (B)

Passivation seal (C)

Wafer Thickness (D)

Scribe Line Width (E)

Wafer Size

2878µm

255 µm

80 µm

10.0 mil

3.15 mil

6 inch

Top Side Metallization PMB118T045SS-255A

Back Side Metallization

Ti Ni Ag

Stored in original container, in

dry nitrogen, (6 months at an

ambient temperature of

23℃±3 ℃)

Recommended

Storage Environment

Electrical Characteristics (T_J=25℃, unless otherwise specified) ⁽²⁾

Parameter

Description

Min.

Typ.

Max.

Test Condition

V_BR

V_F

Reverse Breakdown Voltage

Instantaneous Forward Voltage

Reverse Leakage Current

0.48

I_R=300µA

I_F=20A⁽³⁾

0.55

150

I_R

μA V_R=45V

T_J, T_STG

Operating and Storage Temperature

-40℃ to 150℃ Max

Note:

(1) The preliminary wafer datasheet only for reference;

(2) This characteristics assumes the dies are assembled in TO-277 packages. Actual performance may degrade when assembled.

YJ does not guarantee device performance after assembly;

(3) Pulse Width tp = < 300μS, Duty Cycle <2%;

扬州扬杰电子科技股份有限公司

Yangzhou Yangjie Electronics Technology Co.,Ltd.

Rev.O 2021/07/30

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