Wafer Datasheet
PMB032T045SS-255A
1A/45V(1), low VF Planar MOS Barrier Diode
Mechanical Data
Chip Drawing
Item
Die Size (A)
Information
814µm
32.0 mil
28.0mil
/
Top Metal Pad Size (B)
Chip Size (C)
712 µm
/
Wafer Thickness (D)
Scribe Line Width (E)
Wafer Size
255 µm
80 µm
10.0 mil
3.15 mil
6 inch
Top Side Metallization PMB032T045SS-255A Ag
Back Side Metallization
Ti Ni Ag
Stored in original container, in
dry nitrogen, (6 months at an
ambient temperature of
23℃±3 ℃)
Recommended
Storage Environment
Electrical Characteristics (TJ=25℃, unless otherwise specified) (2)
Un
it
Parameter
Description
Min.
Typ.
Max.
Test Condition
VBR
VF
Reverse Breakdown Voltage
Instantaneous Forward Voltage
Reverse Leakage Current
46
-
52
-
V
IR =300µA
IF =1A(3)
0.41
100
0.46
200
V
IR
-
μA VR =45V
TJ, TSTG
Operating and Storage Temperature
-40℃ to 150℃ Max
Note:
(1) The preliminary wafer datasheet only for reference;
(2) This characteristics assumes the dies are assembled in SMA packages. Actual performance may degrade when assembled. YJ
does not guarantee device performance after assembly;
(3) Pulse Width tp = < 300μS, Duty Cycle <2%;
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronics Technology Co.,Ltd.
Yangzhou Yangjie Electronics Technology Co.,Ltd.
Rev.O 2021/07/30