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PM75CBS060 PDF预览

PM75CBS060

更新时间: 2024-11-20 12:46:31
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
6页 118K
描述
FLAT-BASE TYPE INSULATED PACKAGE

PM75CBS060 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:, MODULE,15LEAD,1.52
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.82
模拟集成电路 - 其他类型:AC MOTOR CONTROLLERJESD-30 代码:R-XUFM-X15
功能数量:1端子数量:15
最大输出电流:150 A封装主体材料:UNSPECIFIED
封装等效代码:MODULE,15LEAD,1.52封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
电源:15,300 V认证状态:Not Qualified
子类别:Motion Control Electronics最大供电电压 (Vsup):16.5 V
最小供电电压 (Vsup):13.5 V标称供电电压 (Vsup):15 V
表面贴装:NO技术:HYBRID
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

PM75CBS060 数据手册

 浏览型号PM75CBS060的Datasheet PDF文件第2页浏览型号PM75CBS060的Datasheet PDF文件第3页浏览型号PM75CBS060的Datasheet PDF文件第4页浏览型号PM75CBS060的Datasheet PDF文件第5页浏览型号PM75CBS060的Datasheet PDF文件第6页 
MITSUBISHI<INTELLIGENTPOWER MODULES>
PM75CBS060
FLAT-BASETYPE
INSULATEDPACKAGE
PM75CBS060  
FEATURE  
a) Adopting 4th generation IGBT chip, which performance is  
improved by 1µm fine rule process.  
For example, typical Vce(sat)=1.7V  
b) Using new Diode which is designed to get soft reverse  
recovery characteristics.  
c) Over-temperature protection by detecting Tj of the IGBT  
chips  
• 3φ 75A, 600V Current-sense IGBT type inverter  
• Monolithic gate drive & protection logic  
• Detection, protection & status indication circuits for over-  
current, short-circuit, over-temperature & under-voltage  
• Acoustic noise-less 5.5/7.5kW class inverter application  
APPLICATION  
Servo drives and other motor controls  
PACKAGE OUTLINES  
Dimensions in mm  
120  
7
106 0.3  
2.54  
2.54  
2.54  
2.54 2.54  
2.54 2.54  
10.16  
10.16  
10.16  
2.54  
15  
11  
6.5  
23.79  
2.54  
2.54  
2.54  
1
4
7
10  
φ5.5  
MOUNTING HOLES  
R7  
7
W
V
U
N
P
15  
19  
19  
19  
19  
10  
9
Terminal code  
3
5
1. VWPC  
2. WP  
9. VUP1  
10. VNC  
11. VN1  
12. WN  
13. VN  
3. VWP1  
4. VVPC  
5. VP  
6. VVP1  
7. VUPC  
8. UP  
14. UN  
15. Fo  
L A B E L  
Sep. 2001  

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