Datasheet > PM606BA

PM606BA

更新时间： 2024-11-07 17:15:31

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	323K
描述
SOT-23(S)

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中文翻译

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数据手册

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PM606BA 数据手册

N-Channel Enhancement Mode Field

Effect Transistor

PM606BA

NIKO-SEM

SOT-23(S)

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

30V

R_DS(ON)

I_D

6.2A

20mΩ

G. GATE

D. DRAIN

S. SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

UNITS

±20

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current¹

Power Dissipation³

V_GS

T_A= 25 °C

T_A= 70 °C

6.2

I_D

I_DM

T_A= 25 °C

T_A= 70 °C

1.3

P_D

0.8

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

146

t ≦10s

Junction-to-Ambient²

R_JA

R_JC

°C / W

Steady-State

Junction-to-Case

¹Pulse width limited by maximum junction temperature, Ratings are based on low frequency and duty cycles to keep

initial T_J=25°C.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

³The Power dissipation is based on R_JAt ≦10s value.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

PARAMETER

SYMBOL

TEST CONDITIONS

UNIT

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

1.3 1.75 2.3

V_DS= 0V, V_GS= ±20V

±100 nA

V_DS= 24V, V_GS= 0V

Zero Gate Voltage Drain Current

I_DSS

A

V_DS= 20V, V_GS= 0V, T_J= 55 °C

M-15-4

REV 1.2

12 3 4

中文翻译

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