Datasheet > PM5W6EA

PM5W6EA

更新时间： 2024-10-31 17:15:35

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	364K
描述
SOT-23(S)

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中文翻译

获取价格

数据手册

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PM5W6EA 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

PM5W6EA

SOT-23(S)

NIKO-SEM

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

30V

R_DS(ON)

I_D

31mΩ

Features

ESD Protected

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

• Products Integrated ESD diode with ESD Protected up to 2KV.

Applications

G. GATE

D. DRAIN

S. SOURCE

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

UNITS

Gate-Source Voltage

Pulsed Drain Current¹

V_GS

±12

I_DM

T_A= 25 °C

T_A= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current

Power Dissipation³

I_D

1.4

P_D

0.9

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JA

TYPICAL

MAXIMUM

UNITS

°C / W

Junction-to-Ambient²

t ≦10s

Junction-to-Ambient²

137

Steady-State

R_JA

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

³The Power dissipation is based on R_JAt ≦10s value.

M-51-4

REV1.0

12 3 4

中文翻译

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