Datasheet > PM555BZ

PM555BZ

更新时间： 2024-09-14 17:15:35

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	341K
描述
SOT-23

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中文翻译

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数据手册

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PM555BZ 数据手册

P-Channel Enhancement Mode

Field Effect Transistor

PM555BZ

NIKO-SEM

SOT-23

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

-30V

R_DS(ON)

I_D

-5A

29mΩ

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

G: GATE

D: DRAIN

S: SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

SYMBOL

V_GS

LIMITS

±25

UNITS

T_A= 25 °C

T_A= 70 °C

-5

Continuous Drain Current

Pulsed Drain Current¹

Power Dissipation³

I_D

-4

I_DM

-29

T_A= 25 °C

T_A= 70 °C

1.2

P_D

0.8

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JA

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient²

t ≦10s

°C/W

Junction-to-Ambient²

122

Steady-State

R_JA

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper.

³The Power dissipation is based on R_JAt ≦10s value.

N-37-4

REV 1.1

12 3 4

中文翻译

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