Datasheet > PM39F040-55PCE

PM39F040-55PCE

更新时间： 2024-11-10 22:44:23

品牌	Logo	应用领域
PMC		闪存
页数	文件大小	规格书
23页	139K
描述
1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory

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PM39F040-55PCE 数据手册

PMC

Pm39F010 / Pm39F020 / Pm39F040

1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory

FEATURES

Single Power Supply Operation

- Low voltage range: 4.5 V - 5.5 V

• Automatic Erase and Byte Program

- Typical 16 µs/byte programming time

- Typical 55 ms sector/block/chip erase time

• Memory Organization

- Pm39F010: 128K x 8 (1 Mbit)

- Pm39F020: 256K x 8 (2 Mbit)

- Pm39F040: 512K x 8 (4 Mbit)

• Low Power Consumption

- Typical 8 mA active read current

- Typical 9 mA program/erase current

- Typical 0.5 µA CMOS standby current

• High Performance Read

- 55/70 ns access time

• High Product Endurance

- Guarantee 100,000 program/erase cycles per

• Cost Effective Sector/Block Architecture

- Uniform 4 Kbyte sectors

single sector (preliminary)

- Minimum 20 years data retention

- Uniform 64 Kbyte blocks (sector-group)

• Industrial Standard Pin-out and Packaging

- 32-pin Plastic DIP

- 32-pin PLCC

- 32-pin VSOP (TSOP 8mm x 14mm)

- Optional lead-free (Pb-free) packages

• Data# Polling and Toggle Bit Features

• Hardware Data Protection

GENERAL DESCRIPTION

The Pm39F010/020/040 are 1 Mbit/2 Mbit/4 Mbit 5.0 Volt-only Flash Memories. These devices are designed to use

a single low voltage, range from 4.5 Volt to 5.5 Volt, power supply to perform read, erase and program operations.

The 12.0 Volt V_PPpower supply for program and erase operations are not required. The devices can be programmed

in standard EPROM programmers as well.

The memory arrays of Pm39F010/020/040 are divided into uniform 4 Kbyte sectors or uniform 64 Kbyte blocks

(sector group - consists of sixteen adjacent sectors). The sector or block erase feature allows users to flexibly

erase an memory area as small as 4 Kbyte or as large as 64 Kbyte by one single erase operation without affecting

the data in others. The chip erase feature allows the whole memory array to be erased in one single erase opera-

tion. The devices can be programmed on a byte-by-byte basis after performing the erase operation.

The devices have a standard microprocessor interface as well as a JEDEC standard pin-out/command set. The

program operation is executed by issuing the program command code into command register. The internal control

logic automatically handles the programming voltage ramp-up and timing. The erase operation is executed by

issuing the chip erase, block, or sector erase command code into command register. The internal control logic

automatically handles the erase voltage ramp-up and timing. The preprogramming on the array which has not been

programmed is not required before an erase operation. The devices offer Data# Polling and Toggle Bit functions, the

progress or completion of program and erase operations can be detected by reading the Data# Polling on I/O7 or

the Toggle Bit on I/O6.

The Pm39F010/020/040 are manufactured on PMC’s advanced nonvolatile CMOS technology, P-FLASH™. The

devices are offered in 32-pin PDIP, PLCC and VSOP packages with access time of 55 and 70 ns.

Programmable Microelectronics Corp.

Issue Date: March 2004, Rev:1.3

12 3 4 5 6 7...23

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与PM39F040-55PCE相关器件

型号	品牌	获取价格	描述	数据表
PM39F040-55VCE	PMC	获取价格	1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory
PM39F040-70JC	PMC	获取价格	1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory
PM39F040-70JCE	PMC	获取价格	1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory
PM39F040-70PC	PMC	获取价格	1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory
PM39F040-70PCE	ISSI	获取价格	Flash, 512KX8, 70ns, PDIP32,
PM39F040-70PCE	PMC	获取价格	1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory
PM39F040-70VC	PMC	获取价格	1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory
PM39F040-70VCE	PMC	获取价格	1 Mbit / 2 Mbit / 4 Mbit 5 Volt-only CMOS Flash Memory
PM39LV010	PMC	获取价格	512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
PM39LV010-55JC	ISSI	获取价格	Flash, 128KX8, 55ns, PQCC32,

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