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PK200HB160 PDF预览

PK200HB160

更新时间: 2024-11-04 22:26:31
品牌 Logo 应用领域
SANREX 栅极触发装置可控硅整流器
页数 文件大小 规格书
2页 112K
描述
THYRISTOR MODULE

PK200HB160 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.7
Is Samacsys:N最大直流栅极触发电流:100 mA
最大直流栅极触发电压:3 V快速连接描述:0
螺丝端子的描述:0最大维持电流:50 mA
最大漏电流:50 mA通态非重复峰值电流:5500 A
最大通态电流:200000 A最高工作温度:125 °C
最低工作温度:-40 °C重复峰值反向电压:1600 V
子类别:Silicon Controlled Rectifiers触发设备类型:SCR
Base Number Matches:1

PK200HB160 数据手册

 浏览型号PK200HB160的Datasheet PDF文件第2页 
THYRISTOR MODULE  
(
)
PD,PE  
PK 200HB  
UL;E76102M)  
Power Thyristor/Diode Module PK200HB series are designed for various rectifier  
circuits and power controls. For your circuit application. following internal connections  
and wide voltage ratings up to 1,600V are available.  
92  
26  
12  
26  
7
4-φ6M5�  
Isolated mounting base  
TAV)  
TRMSTSM  
200A, I 310A, I  
I
5500A  
di/dt 200 A/μs  
dv/dt 500V/μs  
18  
2
Applications)  
Various rectifiers  
AC/DC motor drives  
Heater controls  
Light dimmers  
R8.0  
Internal Configurations  
M8×14  
♯110TAB  
(2.8.0.5T�  
K2  
G2  
K2  
K2  
G2  
3
2
1
3
2
1
3
2
1
K1G1  
(A2)�  
(K2)�  
K1G1  
A1K2  
K1  
(K2)�  
(A2)�  
(K2)�  
(A2)�  
Static switches  
A1K2  
A1K2  
80±0.3  
PK  
PD  
PE  
UnitA  
Maximum Ratings  
Ratings  
Symbol  
Item  
Unit  
PK200HB120 PD200HB120  
PE200HB120  
PK200HB160 PD200HB160  
PE200HB160  
VRRM  
VRSM  
VDRM  
1200  
1300  
1200  
1600  
1700  
1600  
V
V
V
Repetitive Peak Reverse Voltage  
Non-Repetitive Peak Reverse Voltage  
Repetitive Peak Off-State Voltage  
Symbol  
Item  
Conditions  
Ratings  
Unit  
A
TAV)  
I
200  
Average On-State Current  
R.M.S. On-State Current  
Surge On-State Current  
Single phase, half wave, 180°conduction, Tc74℃  
TRMS)  
I
310  
A
Single phase, half wave, 180°conduction, Tc74℃  
1
TSM  
I
A
cycle, 50Hz/60Hz, peak Value, non-reqetitive  
5000/5500  
2
2
2
2
I t  
Value for one cycle of surge current  
125000  
A S  
I t  
GM  
P
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Gate Current  
10  
W
W
GAV)  
P
3
FGM  
I
3
10  
A
FGM  
V
V
Peak Gate VoltageForward)  
Peak Gate VoltageReverse)  
Critical Rate of Rise of On-State Current  
RGM  
V
5
V
1
G
D
DRM  
G
200  
di/dt  
I 100mATj25V =  
2V dI  
/
dt0.1A/μs  
A/μs  
V
ISO  
V
A.C. 1 minute  
2500  
Isolation Breakdown VoltageR.M.S.)  
Tj  
Operating Junction Temperature  
40 to +125  
40 to +125  
2.728)  
11115)  
510  
Tstg  
Storage Temperature  
MountingM5Recommended Value 1.5-2.515-25)  
TerminalM8Recommended Value 8.8-10 90-105)  
Typical Value  
Mounting  
Torque  
N・m  
(㎏fB)  
g
Mass  
Electrical Characteristics  
Symbol  
Item  
Conditions  
at V , Single phase, half wave, Tj125℃  
Ratings  
50  
Unit  
mA  
mA  
V
DRM  
I
Repetitive Peak Off-State Current, max.  
Repetitive Peak Reverse Current, max.  
Peak On-State Voltage, max.  
Gate Trigger Current/Voltage, max.  
Non-Trigger Gate, Voltage. min.  
Turn On Time, max.  
DRM  
RRM  
I
DRM  
50  
at V , Single phase, half wave, Tj125℃  
TM  
V
1.50  
100/3  
0.25  
10  
On-State Current 750A, Tj125Inst. measurement  
GT  
GT  
/V  
T
D
I
Tj25℃,I 1AV 6V  
mA/V  
V
1
GD  
V
D
DRM  
Tj125℃,V =  
2V  
1
tgt  
T
G
D
DRM  
G
I 250AI 100mATj25V =/V dI /dt0.1A/μs  
μs  
2
2
Critical Rate of Rise of Off-State Voltage, min.  
Holding Current, typ.  
D
DRM  
500  
50  
dv/dt  
Tj125℃,V =/V Exponential wave.  
V/μs  
mA  
mA  
/W  
3
H
I
Tj25℃  
L
I
Lutching Current, typ.  
100  
0.18  
Tj25℃  
Junction to case  
Rthj-cThermal Impedance, max.  
markThyristor and Diode part. No markThyristor part  
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com  

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