Datasheet > PJT7601

PJT7601

更新时间： 2024-09-24 14:54:39

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
9页	567K
描述
SOT-363

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中文翻译

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数据手册

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PJT7601 数据手册

PPJT7601

20V Complementary Enhancement Mode MOSFET – ESD Protected

SOT-363

Unit: inch(mm)

20/-20V

0.5/-0.5A

Voltage

Current

Features

 Low Voltage Drive (1.2V)

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc.

 ESD Protected

 Lead free in compliance with EU RoHS 2011/65/EU

directive

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case: SOT-363 Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0002 ounces, 0.006 grams

(TOP VIEW)

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL N-Ch LIMIT P-Ch LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

+10

0.5

1.0

-20

+10

-0.5

-1.0

Continuous Drain Current

(Note 4)

Pulsed Drain Current

I_DM

T_a=25^oC

Derate above 25^oC

350

2.8

mW/ ^oC

^oC

Power Dissipation

P_D

Operating Junction and Storage Temperature Range

Typical Thermal resistance

T_J,T_STG

-55~150

Junction to Ambient ^{(Note 3)}

^oC/W

R_θJA

357

April 7,2016-REV.00

Page 1

12 3 4 5 6 7...9

中文翻译

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