Datasheet > PJT138K_14

PJT138K_14

更新时间： 2024-09-24 01:24:03

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	392K
描述
50V N-Channel Enhancement Mode MOSFET â ESD Protected

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中文翻译

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数据手册

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PJT138K_14 数据手册

PPJT138K

50V N-Channel Enhancement Mode MOSFET – ESD Protected

SOT-363

Unit: inch(mm)

50 V

360mA

Voltage

Current

Features

 RDS(ON) , VGS@10V, ID@500mA<1.6Ω

 RDS(ON) , VGS@4.5V, ID@200mA<2.5Ω

 RDS(ON) , VGS@2.5V, ID@100mA<4.5Ω

 Advanced Trench Process Technology

 Specially Designed for Battery Operated Systems, Solid-State

Relays Drivers: Relay, Displays, Memories, etc.

 ESD Protected 2KV HBM

 Lead free in compliance with EU RoHS 2011/65/EU directive

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case: SOT-363 Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.00021 ounces, 0.006 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

+20

Continuous Drain Current

Pulsed Drain Current

360

I_DM

1200

236

T_A=25^oC

Derate above 25^oC

mW/ ^oC

^oC

Power Dissipation

P_D

1.89

Operating Junction and Storage Temperature Range

Typical Thermal resistance

T_J,T_STG

-55~150

Junction to Ambient ^{(Note 3)}

^oC/W

R_θJA

530

November 13,2014-REV.02

Page 1

12 3 4 5 6

中文翻译

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