Datasheet > PJQ4460AP

PJQ4460AP

更新时间： 2024-10-29 14:53:11

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	971K
描述
DFN3333-8L

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中文翻译

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PJQ4460AP 数据手册

PJQ4460AP

60V N-Channel Enhancement Mode MOSFET

DFN3333-8L

60 V

11 A

Voltage

Current

Features

 R_DS(ON), V_GS@10V, I_D@6A<72mΩ

 R_DS(ON), V_GS@4.5V, I_D@3A<88mΩ

 Advanced Trench Process Technology

 High density cell design for ultra low on-resistance

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case : DFN3333-8L Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight : 0.03 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

LIMIT

UNITS

V_DS

V_GS

+20

Gate-Source Voltage

T_C=25^oC

T_C=100^oC

T_C=25^oC

T_C=100^oC

T_A=25^oC

T_A=70^oC

T_A=25^oC

T_A=70^oC

Continuous Drain Current^{(Note 4)}

Pulsed Drain Current^{(Note 1)}

Power Dissipation

I_D

I_DM

3.7

2.9

Continuous Drain Current^{(Note 4)}

I_D

Power Dissipation

1.3

Single Pulse Avalanche Energy^{(Note 6)}

E_AS

T_J,T_STG

R_θJC

^oC

Operating Junction and Storage Temperature Range

-55~150

6.3

62.5

Junction to Case

Typical Thermal Resistance^{(Note 4,5)}

Junction to Ambient

^oC/W

R_θJA

 Limited only By Maximum Junction Temperature

February 18,2023

PJQ4460AP-REV.02

Page 1

12 3 4 5 6

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