Datasheet > PJQ1820U-20V

PJQ1820U-20V

更新时间： 2023-12-06 20:00:15

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	417K
描述
DFN1010B-6L

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PJQ1820U-20V 数据手册

PJQ1820U-20V

20V N-Channel Enhancement Mode MOSFET

DFN1010B-6L

Voltage

Current

20 V

1 A

Features

● Advanced Trench Process Technology

● ESD Protected

● Low Gate Charge

● Fast Switching

● Lead free in compliance with EU RoHS 2.0

● Green molding compound as per IEC 61249 standard

Mechanical Data

● Case : DFN1010B-6L Package

● Terminals : Solderable per MIL-STD-750, Method 2026

● Approx. Weight : 0.0011 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

I_D

±8

Continuous Drain Current^{(Note 4)}

Pulsed Drain Current^{(Note 1)}

1.0

2.0

I_DM

T_A=25^oC

400

mW/ ^oC

^oC

Power Dissipation

Derate above 25^oC

3.2

Operating Junction and Storage Temperature Range

Typical Thermal Resistance

T_J,T_STG

R_θJA

-55~150

312

^oC/W

Junction to Ambient^{(Note 5)}

June 24,2022

PJQ1820U-20V-REV.00

Page 1

12 3 4 5 6

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