Datasheet > PJD45P04-AU

PJD45P04-AU

更新时间： 2024-11-06 14:56:03

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	860K
描述
TO-252AA

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中文翻译

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数据手册

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PJD45P04-AU 数据手册

PPJD45P04-AU

40V P-Channel Enhancement Mode MOSFET

-40 V

-45 A

Voltage

Current

Features

 R_DS(ON), V_GS@-10V, I_D@-15A<17mΩ

 R_DS(ON), V_GS@-4.5V, I_D@-10A<25mΩ

 High switching speed

TO-252AA

 Improved dv/dt capability

 Low Gate Charge

 Low reverse transfer capacitance

 AEC-Q101 qualified

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 Standard

Mechanical Data

 Case : TO-252AA Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight : 0.0104 ounces, 0.297grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

V_DS

LIMIT

UNITS

-40

+20

-45

Gate-Source Voltage

V_GS

T_C=25^oC

T_C=100^oC

T_C=25^oC

T_C=100^oC

T_A=25^oC

T_A=70^oC

T_A=25^oC

T_A=70^oC

Continuous Drain Current ^{(Note 4)}

Pulsed Drain Current ^{(Note 1)}

Power Dissipation

I_D

-28

I_DM

-135

-8.5

-7

Continuous Drain Current ^{(Note 4)}

Power Dissipation

I_D

2.0

^oC

1.3

Operating Junction and Storage Temperature Range

T_J,T_STG

R_θJC

-55~150

2.0

Junction to Case

Typical Thermal Resistance ^{(Note 4,5)}

^oC/W

Junction to Ambient

R_θJA

62.5

 Limited only By Maximum Junction Temperature

April 01,2019-REV.00

Page 1

12 3 4 5 6

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