Datasheet > PJA3416AE

PJA3416AE

更新时间： 2024-10-03 01:24:03

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	320K
描述
20V N-Channel Enhancement Mode MOSFET â ESD Protected

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PJA3416AE 数据手册

PPJA3416AE

20V N-Channel Enhancement Mode MOSFET – ESD Protected

SOT-23

Unit: inch(mm)

20 V

6.5A

Voltage

Current

Features

 RDS(ON) , VGS@4.5V, ID@6.5A<22mΩ

 RDS(ON) , VGS@2.5V, ID@5.5A<26mΩ

 RDS(ON) , VGS@1.8V, ID@5.0A<34mΩ

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc.

 ESD Protected 2KV HBM

 Lead free in compliance with EU RoHS 2011/65/EU directive

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case: SOT-23 Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0003 ounces, 0.0084 grams

 Marking: A6E

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

Continuous Drain Current

Pulsed Drain Current ^{(Note 4)}

6.5

I_DM

T_a=25^oC

Derate above 25^oC

1.25

Power Dissipation

P_D

mW/ ^oC

^oC

Operating Junction and Storage Temperature Range

Typical Thermal resistance

T_J,T_STG

-55~150

Junction to Ambient ^{(Note 3)}

^oC/W

R_θJA

100

July 14,2015-REV.00

Page 1

12 3 4 5 6

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与PJA3416AE相关器件

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