Datasheet > PJA3415AE-AU

PJA3415AE-AU

更新时间： 2024-11-21 14:55:55

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	464K
描述
SOT-23

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中文翻译

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数据手册

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PJA3415AE-AU 数据手册

PPJA3415AE-AU

20V P-Channel Enhancement Mode MOSFET – ESD Protected

SOT-23

Unit : inch(mm)

-20 V

-4.3A

Voltage

Current

Features

 R_DS(ON), V_GS@-4.5V, I_D@-4.3A<52mΩ

 R_DS(ON), V_GS@-2.5V, I_D@-3.0A<60mΩ

 R_DS(ON), V_GS@-1.8V, I_D@-1.5A<80mΩ

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc

 ESD Protected 2KV HBM

 AEC-Q101 qualified

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case : SOT-23 Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight : 0.0003 ounces, 0.0084 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

-20

Continuous Drain Current

Pulsed Drain Current

-4.3

I_DM

-17.2

1.25

T_a=25^oC

Derate above 25^oC

mW/ ^oC

^oC

Power Dissipation

P_D

Operating Junction and Storage Temperature Range

Typical Thermal Resistance

T_J,T_STG

-55~150

Junction to Ambient ^{(Note 3)}

^oC/W

R_θJA

100

October 27,2017-REV.02

Page 1

12 3 4 5 6

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