Datasheet > PJ13005

PJ13005

更新时间： 2024-09-17 22:44:27

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描述
NPN Epitaxial Silicon Transistor

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PJ13005 数据手册

PJ13005

NPN Epitaxial Silicon Transistor

HIGH VOLTAGE SWITCH MODE APPLICATION

TO-220

•

High Speed Switching

•

Suitable for Switching Regulator and Motor Control

ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)

Characteristic

Collector Emitter

Symbol

V_CEV

Rating

700

Unit

Voltage(V_BE

=1.5V)

Collector Emitter

Voltage(open base)

Emitter Base Voltage(open

collector)

V_CEO

V_EBO

400

Pin : 1. Base

2. Collector

3. Emitter

Collector Current (DC)

Collector Current (Pulse)

Base Current

I_B

ORDERING INFORMATION

Collector Dissipation

Junction Temperature

Storage Temperature

Tstg

150

-65 ~150

℃

Device

Operating Temperature Package

-20℃～+85℃ TO-220

PJ13005CZ

ELECTRICAL CHARACTERISTICS(Ta = 25℃)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

*Collector Emitter Sustaining Voltage

Emitter Cutoff Current

V_{CEO SUS}

(

)

Ic = 10mA, I_B= 0

V_EB=9V, Ic=0

400

I_EBO

*DC Current Gain

h_FE

V_CE=5V, Ic =1A

V_CE=5V, Ic =2A

*Collector Emitter Saturation Voltage

*Base Emitter Saturation Voltage

V_CE(sat) Ic =1A, I_B=0.2A

Ic =2A, I_B=0.5A

Ic =4A, I_B=1A

V_BE(sat) Ic =1A, I_B=0.2A

Ic =2A, I_B=0.5A

0.5

0.6

1.0

1.2

1.6

0.8

μS

Turn On Time

Storage Time

Fall Time

t _on

V_CC=125V, Ic =2A

I_B1=-I_B2=0.4A

t_f

0.9

ꢀ

Pulse Test: PW≤300 μS, Duty Cycle =1.5 %

1-2

2002/01.rev.A

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