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PIC16F84AT-20/SOA21 PDF预览

PIC16F84AT-20/SOA21

更新时间: 2024-10-06 06:40:31
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器光电二极管
页数 文件大小 规格书
90页 1822K
描述
8-BIT, OTPROM, 20 MHz, RISC MICROCONTROLLER, PDSO18, 0.300 INCH, PLASTIC, SOIC-18

PIC16F84AT-20/SOA21 数据手册

 浏览型号PIC16F84AT-20/SOA21的Datasheet PDF文件第2页浏览型号PIC16F84AT-20/SOA21的Datasheet PDF文件第3页浏览型号PIC16F84AT-20/SOA21的Datasheet PDF文件第4页浏览型号PIC16F84AT-20/SOA21的Datasheet PDF文件第5页浏览型号PIC16F84AT-20/SOA21的Datasheet PDF文件第6页浏览型号PIC16F84AT-20/SOA21的Datasheet PDF文件第7页 
PIC16F84A  
18-pin Enhanced FLASH/EEPROM 8-Bit Microcontroller  
High Performance RISC CPU Features:  
Pin Diagrams  
PDIP, SOIC  
• Only 35 single word instructions to learn  
• All instructions single-cycle except for program  
branches which are two-cycle  
1  
2
3
4
5
6
7
8
9
RA2  
RA3  
18  
17  
16  
15  
14  
13  
12  
11  
10  
RA1  
RA0  
• Operating speed: DC - 20 MHz clock input  
DC - 200 ns instruction cycle  
RA4/T0CKI  
MCLR  
VSS  
OSC1/CLKIN  
OSC2/CLKOUT  
VDD  
• 1024 words of program memory  
• 68 bytes of Data RAM  
RB0/INT  
RB1  
RB7  
RB6  
• 64 bytes of Data EEPROM  
• 14-bit wide instruction words  
• 8-bit wide data bytes  
RB2  
RB5  
RB3  
RB4  
• 15 Special Function Hardware registers  
• Eight-level deep hardware stack  
• Direct, indirect and relative addressing modes  
• Four interrupt sources:  
SSOP  
- External RB0/INT pin  
RA2  
RA3  
1  
2
3
4
5
6
7
8
9
RA1  
RA0  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
- TMR0 timer overflow  
- PORTB<7:4> interrupt-on-change  
- Data EEPROM write complete  
RA4/T0CKI  
MCLR  
OSC1/CLKIN  
OSC2/CLKOUT  
VSS  
VDD  
VDD  
RB7  
RB6  
RB5  
RB4  
Peripheral Features:  
VSS  
RB0/INT  
RB1  
• 13 I/O pins with individual direction control  
• High current sink/source for direct LED drive  
- 25 mA sink max. per pin  
RB2  
10  
RB3  
- 25 mA source max. per pin  
• TMR0: 8-bit timer/counter with 8-bit  
programmable prescaler  
Special Microcontroller Features:  
CMOS Enhanced FLASH/EEPROM  
Technology:  
• 10,000 erase/write cycles Enhanced FLASH  
Program memory typical  
• Low power, high speed technology  
• Fully static design  
• 10,000,000 typical erase/write cycles EEPROM  
Data memory typical  
• Wide operating voltage range:  
- Commercial: 2.0V to 5.5V  
• EEPROM Data Retention > 40 years  
• In-Circuit Serial Programming™ (ICSP™) - via  
two pins  
- Industrial:  
2.0V to 5.5V  
• Low power consumption:  
• Power-on Reset (POR), Power-up Timer (PWRT),  
Oscillator Start-up Timer (OST)  
- < 2 mA typical @ 5V, 4 MHz  
- 15 A typical @ 2V, 32 kHz  
- < 0.5 A typical standby current @ 2V  
• Watchdog Timer (WDT) with its own On-Chip RC  
Oscillator for reliable operation  
• Code protection  
• Power saving SLEEP mode  
• Selectable oscillator options  
2001-2013 Microchip Technology Inc.  
DS35007C-page 1  

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