Datasheet > PHPT60603PY

PHPT60603PY

更新时间： 2024-11-03 11:10:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	729K
描述
60 V, 3 A PNP high power bipolar transistorProduction

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技术参数
数据手册

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PHPT60603PY 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
风险等级：	5.7	JESD-609代码：	e3
湿度敏感等级：	1	端子面层：	Tin (Sn)
Base Number Matches：	1

PHPT60603PY 数据手册

PHPT60603PY

60 V, 3 A PNP high power bipolar transistor

13 January 2014

Product data sheet

1. General description

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device

(SMD) power plastic package.

NPN complement: PHPT60603NY.

2. Features and benefits

High thermal power dissipation capability

•

Suitable for high temperature applications up to 175 °C

Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK

High energy efficiency due to less heat generation

AEC-Q101 qualified

3. Applications

Power management

Load switch

Linear mode voltage regulator

Backlighting applications

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-60

I_C

collector current

-3

I_CM

peak collector current t_p≤ 1 ms; pulsed

-8

R_CEsat

collector-emitter

I_C= -3 A; I_B= -300 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

120

mΩ

saturation resistance

12 3 4 5 6 7...15

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