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PHP3055E

更新时间: 2024-01-30 03:01:37
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
10页 104K
描述
N-channel TrenchMOS transistor

PHP3055E 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.82配置:Single
最大漏极电流 (Abs) (ID):12 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:175 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):40 W子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

PHP3055E 数据手册

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Philips Semiconductors  
Product specification  
N-channel TrenchMOS transistor  
PHP3055E, PHD3055E  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
d
’Trench’ technology  
• Low on-state resistance  
• Fast switching  
VDSS = 55 V  
ID = 10.3 A  
g
RDS(ON) 150 m(VGS = 10 V)  
s
GENERAL DESCRIPTION  
N-channel enhancement mode, field-effect power transistor in a plastic envelope using ’trench’ technology.  
Applications:-  
• d.c. to d.c. converters  
• switched mode power supplies  
The PHP3055E is supplied in the SOT78 (TO220AB) conventional leaded package.  
The PHD3055E is supplied in the SOT428 (DPAK) surface mounting package.  
PINNING  
SOT78 (TO220AB)  
SOT428 (DPAK)  
PIN  
DESCRIPTION  
tab  
tab  
1
2
gate  
drain1  
3
source  
drain  
2
tab  
1
3
1 2 3  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDSS  
VDGR  
VGS  
ID  
Drain-source voltage  
Drain-gate voltage  
Gate-source voltage  
Continuous drain current  
Tj = 25 ˚C to 175˚C  
Tj = 25 ˚C to 175˚C; RGS = 20 k  
-
-
-
-
-
-
-
55  
55  
± 20  
10.3  
7.3  
41  
V
V
V
A
A
A
W
˚C  
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
Tmb = 25 ˚C  
IDM  
PD  
Tj, Tstg  
Pulsed drain current  
Total power dissipation  
Operating junction and  
storage temperature  
33  
175  
- 55  
1 It is not possible to make connection to pin:2 of the SOT428 package  
August 1999  
1
Rev 1.200  

PHP3055E 替代型号

型号 品牌 替代类型 描述 数据表
PHP3055E,127 NXP

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