Datasheet > PHP2N60E

PHP2N60E

更新时间： 2024-09-25 22:44:27

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恩智浦 - NXP		晶体晶体管
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描述
PowerMOS transistors Avalanche energy rated

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PHP2N60E 数据手册

Philips Semiconductors

Product specification

PowerMOS transistors

Avalanche energy rated

PHP2N60E, PHB2N60E, PHD2N60E

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Repetitive Avalanche Rated

• Fast switching

V_DSS= 600 V

I_D= 1.9 A

• Stable off-state characteristics

• High thermal cycling performance

• Low thermal resistance

R_DS(ON)≤ 6 Ω

GENERAL DESCRIPTION

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,

T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching

applications.

The PHP2N60E is supplied in the SOT78 (TO220AB) conventional leaded package.

The PHB2N60E is supplied in the SOT404 surface mounting package.

The PHD2N60E is supplied in the SOT428 surface mounting package.

PINNING

SOT78 (TO220AB)

SOT404

SOT428

DESCRIPTION

tab

gate

drain¹

source

tab drain

1 2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DSS

V_DGR

V_GS

I_D

Drain-source voltage

T_j= 25 ˚C to 150˚C

600

± 30

1.9

Drain-gate voltage

T_j= 25 ˚C to 150˚C; R_GS= 20 kΩ

Gate-source voltage

Continuous drain current

T_mb= 25 ˚C; V_GS= 10 V

T_mb= 100 ˚C; V_GS= 10 V

T_mb= 25 ˚C

1.2

I_DM

P_D

T_j, T_stg

Pulsed drain current

Total dissipation

Operating junction and

storage temperature range

7.6

T_mb= 25 ˚C

˚C

- 55

150

1 It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.

August 1998

Rev 1.100

12 3 4 5 6 7...10

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