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PHP29N08T PDF预览

PHP29N08T

更新时间: 2023-09-03 20:35:06
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
12页 675K
描述
N-channel TrenchMOS standard level FETProduction

PHP29N08T 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SC-46, 3 PINReach Compliance Code:compliant
风险等级:5.3外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:75 V
最大漏极电流 (ID):27 A最大漏源导通电阻:0.05 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):108 A
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

PHP29N08T 数据手册

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PHP29N08T  
N-channel TrenchMOS standard level FET  
Rev. 02 — 12 March 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic  
package using TrenchMOS technology. This product is designed and qualified for use in  
computing, communications, consumer and industrial applications only.  
1.2 Features and benefits  
„ High noise immunity due to high gate  
„ Low conduction losses due to low  
threshold voltage  
on-state resistance  
1.3 Applications  
„ Industrial motor control  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
drain-source voltage Tj 25 °C; Tj 175 °C  
Min  
Typ  
Max Unit  
VDS  
ID  
-
-
-
-
75  
27  
V
A
drain current  
Tmb = 25 °C; VGS = 11 V;  
see Figure 1; see Figure 3  
Ptot  
total power  
dissipation  
Tmb = 25 °C; see Figure 2  
-
-
-
88  
-
W
Dynamic characteristics  
QGD gate-drain charge  
VGS = 10 V; ID = 29 A;  
VDS = 60 V; Tj = 25 °C;  
see Figure 11  
9
nC  
Static characteristics  
RDSon  
drain-source  
on-state resistance  
VGS = 11 V; ID = 14 A;  
Tj = 175 °C; see Figure 9;  
see Figure 10  
-
-
96  
40  
120  
50  
mΩ  
mΩ  
V
GS = 11 V; ID = 14 A;  
Tj = 25 °C; see Figure 9;  
see Figure 10  

PHP29N08T 替代型号

型号 品牌 替代类型 描述 数据表
PHP29N08T,127 NXP

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