BR211-240

更新时间： 2024-02-07 01:35:43

品牌	Logo	应用领域
恩智浦 - NXP		二极管击穿二极管
页数	文件大小	规格书
7页	35K
描述
Breakover diodes

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技术参数
数据手册

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BR211-240 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.87	最大转折电压：	269 V
最大维持电流：	150 mA	JESD-609代码：	e0
最大通态电压：	2.5 V	最高工作温度：	70 °C
重复峰值反向电压：	211 V	子类别：	Silicon Surge Protectors
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
触发设备类型：	SILICON SURGE PROTECTOR	Base Number Matches：	1

BR211-240 数据手册

Philips Semiconductors

Product specification

Breakover diodes

BR211 series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

A range of bidirectional, breakover

diodes in an axial, hermetically

sealed, glass envelope. These

devices feature controlled breakover

voltage and high holding current

together with high peak current

SYMBOL

PARAMETER

MIN.

MAX. UNIT

BR211-140 to 280

V_(BO)

I_H

I_TSM

Breakover voltage

140

150

280

Holding current

Non-repetitive peak current

handling

capability.

include

Typical

applications

overvoltage

transient

protection

telecommunications equipment.

OUTLINE - SOD84

SYMBOL

XXX denotes voltage grade

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_D

Continuous voltage

Non repetitive peak current

75% of

V_(BO)typ

I_TSM1

10/320 µs impulse equivalent to

10/700 µs, 1.6 kV voltage impulse

(CCITT K17)

I_TSM2

Non repetitive on-state current half sine wave; t = 10 ms;

T_j= 70 ˚C prior to surge

I²t

dI_T/dt

I²t for fusing

t_p= 10 ms

1.1

A²s

A/µs

Rate of rise of on-state current t_p= 10 µs

after V_(BO)turn-on

P_tot

P_TM

T_stg

T_a

Continuous dissipation

Peak dissipation

T_a= 25˚C

t_p= 1 ms; T_a= 25˚C

1.2

˚C

-65

Storage temperature

150

Operating ambient temperature off-state

Overload junction temperature on-state

T_vj

150

August 1996

Rev 1.200

12 3 4 5 6 7

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