Philips Semiconductors
Product specification
Breakover diodes
BR211 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
A range of bidirectional, breakover
diodes in an axial, hermetically
sealed, glass envelope. These
devices feature controlled breakover
voltage and high holding current
together with high peak current
SYMBOL
PARAMETER
MIN.
MAX. UNIT
BR211-140 to 280
V(BO)
IH
ITSM
Breakover voltage
140
150
-
280
-
V
mA
A
Holding current
Non-repetitive peak current
40
handling
capability.
include
Typical
applications
overvoltage
transient
protection
in
telecommunications equipment.
OUTLINE - SOD84
SYMBOL
XXX denotes voltage grade
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VD
Continuous voltage
Non repetitive peak current
-
75% of
V(BO)typ
40
V
ITSM1
10/320 µs impulse equivalent to
10/700 µs, 1.6 kV voltage impulse
(CCITT K17)
-
A
ITSM2
Non repetitive on-state current half sine wave; t = 10 ms;
Tj = 70 ˚C prior to surge
-
15
A
I2t
dIT/dt
I2t for fusing
tp = 10 ms
-
-
1.1
50
A2s
A/µs
Rate of rise of on-state current tp = 10 µs
after V(BO) turn-on
Ptot
PTM
Tstg
Ta
Continuous dissipation
Peak dissipation
Ta = 25˚C
tp = 1 ms; Ta = 25˚C
-
1.2
50
W
W
˚C
˚C
˚C
-
-65
-
Storage temperature
150
70
Operating ambient temperature off-state
Overload junction temperature on-state
Tvj
-
150
August 1996
1
Rev 1.200