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BR211-220 PDF预览

BR211-220

更新时间: 2024-01-30 07:47:45
品牌 Logo 应用领域
恩智浦 - NXP 二极管击穿二极管
页数 文件大小 规格书
7页 35K
描述
Breakover diodes

BR211-220 数据手册

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Philips Semiconductors  
Product specification  
Breakover diodes  
BR211 series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
A range of bidirectional, breakover  
diodes in an axial, hermetically  
sealed, glass envelope. These  
devices feature controlled breakover  
voltage and high holding current  
together with high peak current  
SYMBOL  
PARAMETER  
MIN.  
MAX. UNIT  
BR211-140 to 280  
V(BO)  
IH  
ITSM  
Breakover voltage  
140  
150  
-
280  
-
V
mA  
A
Holding current  
Non-repetitive peak current  
40  
handling  
capability.  
include  
Typical  
applications  
overvoltage  
transient  
protection  
in  
telecommunications equipment.  
OUTLINE - SOD84  
SYMBOL  
XXX denotes voltage grade  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VD  
Continuous voltage  
Non repetitive peak current  
-
75% of  
V(BO)typ  
40  
V
ITSM1  
10/320 µs impulse equivalent to  
10/700 µs, 1.6 kV voltage impulse  
(CCITT K17)  
-
A
ITSM2  
Non repetitive on-state current half sine wave; t = 10 ms;  
Tj = 70 ˚C prior to surge  
-
15  
A
I2t  
dIT/dt  
I2t for fusing  
tp = 10 ms  
-
-
1.1  
50  
A2s  
A/µs  
Rate of rise of on-state current tp = 10 µs  
after V(BO) turn-on  
Ptot  
PTM  
Tstg  
Ta  
Continuous dissipation  
Peak dissipation  
Ta = 25˚C  
tp = 1 ms; Ta = 25˚C  
-
1.2  
50  
W
W
˚C  
˚C  
˚C  
-
-65  
-
Storage temperature  
150  
70  
Operating ambient temperature off-state  
Overload junction temperature on-state  
Tvj  
-
150  
August 1996  
1
Rev 1.200  

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