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BGU7003 PDF预览

BGU7003

更新时间: 2024-01-13 18:08:37
品牌 Logo 应用领域
恩智浦 - NXP 射频和微波射频放大器微波放大器
页数 文件大小 规格书
17页 151K
描述
Wideband silicon germanium low-noise amplifier MMIC

BGU7003 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.66特性阻抗:50 Ω
构造:COMPONENT增益:9 dB
JESD-609代码:e3最大工作频率:6000 MHz
最小工作频率:40 MHz最高工作温度:85 °C
最低工作温度:-40 °C射频/微波设备类型:WIDE BAND LOW POWER
端子面层:Tin (Sn)Base Number Matches:1

BGU7003 数据手册

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BGU7003  
Wideband silicon germanium low-noise amplifier MMIC  
Rev. 01 — 2 March 2009  
Product data sheet  
1. Product profile  
1.1 General description  
The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed,  
low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891  
package.  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken  
during transport and handling.  
1.2 Features  
I Low noise high gain microwave MMIC  
I Applicable between 40 MHz and 6 GHz  
I Integrated temperature stabilized bias for easy design  
I Bias current configurable with external resistor  
I Noise figure NF = 0.80 dB at 1.575 GHz  
I Insertion power gain = 18.3 dB at 1.575 GHz  
I 110 GHz transit frequency - SiGe:C technology  
I Power-down mode current consumption < 1 µA  
I Optimized performance at low 5 mA supply current  
I ESD protection > 1 kV Human Body Model (HBM) on all pins  
1.3 Applications  
I GPS  
I Satellite radio  
I Low-noise amplifiers for microwave communications systems  
I WLAN and CDMA applications  
I Analog / digital cordless applications  

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