生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.71 | Is Samacsys: | N |
最高工作温度: | 100 °C | 最低工作温度: | -20 °C |
封装主体材料: | PLASTIC/EPOXY | 封装等效代码: | MOT CASE 714B |
电源: | 24 V | 子类别: | RF/Microwave Amplifiers |
最大压摆率: | 450 mA | 技术: | HYBRID |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
BGD885,112 | NXP | BGD885 - 860 MHz, 17 dB gain power doubler amplifier SFM 9-Pin |
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BGD885_01 | NXP | 860 MHz, 17 dB gain power doubler amplifier |
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BGD885_15 | JMNIC | 860 MHz, 17 dB gain power doubler amplifier |
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BGD885_2015 | JMNIC | 860 MHz, 17 dB gain power doubler amplifier |
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BGD902 | NXP | 860 MHz, 18.5 dB gain power doubler amplifier |
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BGD902,112 | NXP | RF/Microwave Amplifier, 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT- |
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