5秒后页面跳转
BAV70,215 PDF预览

BAV70,215

更新时间: 2024-02-03 22:13:20
品牌 Logo 应用领域
恩智浦 - NXP PC光电二极管
页数 文件大小 规格书
15页 96K
描述
BAV70 series - High-speed switching diodes TO-236 3-Pin

BAV70,215 技术参数

是否Rohs认证:符合生命周期:Transferred
零件包装代码:TO-236包装说明:PLASTIC, SMD, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:2.71Is Samacsys:N
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.25 V
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:4 A元件数量:2
端子数量:3最高工作温度:150 °C
最大输出电流:0.125 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.25 W
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向电流:2.5 µA最大反向恢复时间:0.004 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

BAV70,215 数据手册

 浏览型号BAV70,215的Datasheet PDF文件第2页浏览型号BAV70,215的Datasheet PDF文件第3页浏览型号BAV70,215的Datasheet PDF文件第4页浏览型号BAV70,215的Datasheet PDF文件第5页浏览型号BAV70,215的Datasheet PDF文件第6页浏览型号BAV70,215的Datasheet PDF文件第7页 
BAV70 series  
High-speed switching diodes  
Rev. 07 — 27 November 2007  
Product data sheet  
1. Product profile  
1.1 General description  
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)  
plastic packages.  
Table 1.  
Product overview  
Type number Package  
NXP  
Package  
configuration  
Configuration  
JEITA  
-
JEDEC  
BAV70  
SOT23  
TO-236AB small  
dual common cathode  
dual common cathode  
BAV70M  
SOT883  
SC-101  
-
leadless ultra  
small  
BAV70S  
SOT363  
SC-88  
-
very small  
quadruple common  
cathode/common cathode  
BAV70T  
BAV70W  
SOT416  
SOT323  
SC-75  
SC-70  
-
-
ultra small  
very small  
dual common cathode  
dual common cathode  
1.2 Features  
I High switching speed: trr 4 ns  
I Low leakage current  
I Low capacitance: Cd 1.5 pF  
I Reverse voltage: VR 100 V  
I Small SMD plastic packages  
1.3 Applications  
I High-speed switching  
I General-purpose switching  
1.4 Quick reference data  
Table 2.  
Symbol  
Per diode  
IR  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
reverse current  
VR = 80 V  
-
-
-
-
-
-
0.5  
100  
4
µA  
V
VR  
reverse voltage  
[1]  
trr  
reverse recovery time  
ns  
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.  
 
 
 
 
 
 
 
 

与BAV70,215相关器件

型号 品牌 描述 获取价格 数据表
BAV70,235 NXP BAV70 series - High-speed switching diodes TO-236 3-Pin

获取价格

BAV70/E8 VISHAY Rectifier Diode, 2 Element, 0.25A, 70V V(RRM), Silicon, TO-236AB

获取价格

BAV70/E9 VISHAY Rectifier Diode, 2 Element, 0.25A, 70V V(RRM), Silicon, TO-236AB

获取价格

BAV70/T1 ETC DIODE KLEINSIGNAL SMD

获取价格

BAV70/T3 NXP 0.125A, 100V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, SMD, 3 PIN

获取价格

BAV70_ DIOTEC DUAL SURFACE MOUNT SWITCHING DIODE

获取价格