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74AUP1G3208GM PDF预览

74AUP1G3208GM

更新时间: 2024-01-21 12:55:40
品牌 Logo 应用领域
恩智浦 - NXP 逻辑集成电路光电二极管
页数 文件大小 规格书
19页 71K
描述
Low-power 3-input OR-AND gate

74AUP1G3208GM 数据手册

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74AUP1G3208  
Low-power 3-input OR-AND gate  
Rev. 01.00 — 17 January 2006  
Preliminary data sheet  
1. General description  
The 74AUP1G3208 is a high-performance, low-power, low-voltage, Si-gate CMOS device,  
superior to most advanced CMOS compatible TTL families.  
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall  
times across the entire VCC range from 0.8 V to 3.6 V.  
This device ensures a very low static and dynamic power consumption across the entire  
VCC range from 0.8 V to 3.6 V.  
This device is fully specified for partial Power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
The 74AUP1G3208 provides the Boolean function: Y = (A + B) × C. The user can choose  
the logic functions OR, AND and OR-AND. All inputs can be connected to VCC or GND.  
2. Features  
Wide supply voltage range from 0.8 V to 3.6 V  
High noise immunity  
Complies with JEDEC standards:  
JESD8-12 (0.8 V to 1.3 V)  
JESD8-11 (0.9 V to 1.65 V)  
JESD8-7 (1.2 V to 1.95 V)  
JESD8-5 (1.8 V to 2.7 V)  
JESD8-B (2.7 V to 3.6 V)  
ESD protection:  
HBM JESD22-A114-C Class 3A. Exceeds 5000 V  
MM JESD22-A115-A exceeds 200 V  
CDM JESD22-C101-C exceeds 1000 V  
Low static power consumption; ICC = 0.9 µA (maximum)  
Latch-up performance exceeds 100 mA per JESD 78 Class II  
Inputs accept voltages up to 3.6 V  
Low noise overshoot and undershoot < 10 % of VCC  
IOFF circuitry provides partial Power-down mode operation  
Multiple package options  
Specified from 40 °C to +85 °C and 40 °C to +125 °C  

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