PHE13003

更新时间： 2024-09-25 22:26:35

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
7页	52K
描述
Silicon Diffused Power Transistor

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PHE13003 数据手册

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

PHE13003AU

GENERAL DESCRIPTION

High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for

use in high frequency electronic lighting ballast applications, converters and inverters, etc.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

V_CESM

V_CBO

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

700

400

1.5

Collector-Base voltage (open emitter)

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

P_tot

T_mb≤ 25 ˚C

V_CEsat

h_FE

I_C= 1.0 A;I_B= 0.25 A

I_C= 1.0 A; V_CE= 5 V

I_C= 1.0 A; I_BON= 0.2 A

1.0

150

t_fi

Fall time (Inductive)

PINNING - SOT533

PIN CONFIGURATION

SYMBOL

DESCRIPTION

base

collector

emitter

tab collector

Top view

MBK915

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_CESM

V_CEO

V_CBO

I_C

Collector to emitter voltage

V_BE= 0 V

700

400

700

1.5

0.75

1.5

150

Collector to emitter voltage (open base)

Collector to base voltage (open emitter)

Collector current (DC)

I_CM

Collector current peak value

Base current (DC)

I_B

I_BM

P_tot

T_stg

T_j

Base current peak value

Total power dissipation

T_mb≤ 25 ˚C

˚C

Storage temperature

-65

Junction temperature

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Junction to mounting base

Junction to ambient

2.5

K/W

in free air

September 1999

Rev 1.000

12 3 4 5 6 7

中文翻译

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