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PHD110NQ03LT PDF预览

PHD110NQ03LT

更新时间: 2024-09-23 21:12:15
品牌 Logo 应用领域
飞利浦 - PHILIPS 开关脉冲晶体管
页数 文件大小 规格书
12页 84K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

PHD110NQ03LT 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.84配置:Single
最大漏极电流 (Abs) (ID):75 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:175 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):115 W子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

PHD110NQ03LT 数据手册

 浏览型号PHD110NQ03LT的Datasheet PDF文件第2页浏览型号PHD110NQ03LT的Datasheet PDF文件第3页浏览型号PHD110NQ03LT的Datasheet PDF文件第4页浏览型号PHD110NQ03LT的Datasheet PDF文件第5页浏览型号PHD110NQ03LT的Datasheet PDF文件第6页浏览型号PHD110NQ03LT的Datasheet PDF文件第7页 
PHD110NQ03LT  
N-channel TrenchMOS™ logic level FET  
Rev. 01 — 16 June 2004  
Product data  
M3D300  
1. Product profile  
1.1 Description  
N-channel enhancement mode field-effect transistor in a plastic package using  
TrenchMOS™ technology.  
1.2 Features  
Logic level threshold  
Low on-state resistance  
Low gate charge  
Surface mount package.  
1.3 Applications  
Control FET in DC-to-DC converters Switched-mode power supplies.  
1.4 Quick reference data  
VDS 25 V  
Ptot 115 W  
ID 75 A  
RDSon 4.6 m.  
2. Pinning information  
Table 1:  
Pinning - SOT428 (D-PAK), simplified outline and symbol  
Pin  
1
Description  
gate (g)  
Simplified outline  
Symbol  
mb  
d
s
[1]  
2
drain (d)  
3
source (s)  
g
mb  
mounting base;  
connected to drain (d)  
mbb076  
2
1
3
Top view  
MBK091  
SOT428 (D-PAK)  
[1] It is not possible to make a connection to pin 2 of the SOT428 package.  
 
 
 
 
 
 
 

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