是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 75 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 115 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PHD11N03LT | NXP |
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N-channel TrenchMOS transistor Logic level FET | |
PHD11N06LT | NXP |
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TrenchMOS transistor Logic level FET | |
PHD11N06LT/T3 | NXP |
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TRANSISTOR 10.3 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DPAK-3, FET Gene | |
PHD12D-H | AUK |
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Board Connector, 12 Contact(s), 2 Row(s), Male, Straight, 0.079 inch Pitch, Solder Termina | |
PHD12N10E | NXP |
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PowerMOS transistor | |
PHD12N10E118 | NXP |
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TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
PHD12NQ15T | NXP |
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N-channel TrenchMOS transistor | |
PHD12NQ15T/T3 | NXP |
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TRANSISTOR 12.5 A, 150 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
PHD13003C | NXP |
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1.5A, 400V, NPN, Si, POWER TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN | |
PHD13003C | WEEN |
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High voltage, high speed, planar passivated NPN power switching transistor with integrated |