Datasheet > PH8230E

PH8230E

更新时间： 2024-09-24 10:13:31

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	177K
描述
N-channel TrenchMOS logic level FET

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PH8230E 数据手册

PH8230E

N-channel TrenchMOS logic level FET

Rev. 04 — 17 November 2009

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Higher operating power due to low

Simple gate drive required due to low

thermal resistance

gate charge

Low conduction losses due to low

on-state resistance

1.3 Applications

DC-to-DC convertors

Notebook computers

Portable equipment

Switched-mode power supplies

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 150 °C

Min

Typ

Max Unit

V_DS

I_D

drain current

T_mb= 25 °C; V_GS= 10 V;

see Figure 1 and 3

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

62.5

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 5 V; I_D= 20 A; V_DS10 V;

T_j= 25 °C; see Figure 11

mΩ

Static characteristics

R_DSon

drain-source

V_GS= 10 V; I_D= 10 A;

7.6

8.2

on-state resistance

T_j= 25 °C; see Figure 9 and 10

12 3 4 5 6 7...12

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PH8230E 替代型号

型号	品牌	替代类型	描述	数据表
PH8230E,115	NXP	完全替代	PH8230E - N-channel TrenchMOS logic level FET SOIC 4-Pin

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