5秒后页面跳转
PH530-SOT23 PDF预览

PH530-SOT23

更新时间: 2024-11-25 00:04:23
品牌 Logo 应用领域
其他 - ETC 放大器
页数 文件大小 规格书
7页 553K
描述
InGaP HBT High Range IF Amplifier

PH530-SOT23 数据手册

 浏览型号PH530-SOT23的Datasheet PDF文件第2页浏览型号PH530-SOT23的Datasheet PDF文件第3页浏览型号PH530-SOT23的Datasheet PDF文件第4页浏览型号PH530-SOT23的Datasheet PDF文件第5页浏览型号PH530-SOT23的Datasheet PDF文件第6页浏览型号PH530-SOT23的Datasheet PDF文件第7页 
PH530-23  
High Linearity InGaP HBT Amplifier  
Functional Diagram  
Features  
Applications  
Mobile Infrastructure  
Cellular, GSM  
4
800MHz - 3000MHz  
19.0 dB Gain at 900MHz  
+30 dBm P1dB  
PCS, WCDMA, WiBro, WiMAX  
W-LAN / ISM  
3
2
+45 dBm Output IP3  
Single Voltage Supply  
Lead-free / Green / RoHS-  
compliant SOT-223 Package  
1
RFID / Fixed Wireless  
Function  
RF IN  
Pin No.  
1
RF OUT / Bias  
Ground  
3
2,4  
Description  
The PH530-23 is a high performance InGaP HBT MMIC Amplifier and high linearity driver amplifier in a high  
quality SOT-223 package. The device features excellent Input and output return loss, highly linear performance.  
The device can be easily matched to obtain optimum power and linearity. The product is targeted for use as  
driver amplifier for wireless infrastructure applications. The PH530-23 operates from a single +5 voltage supply  
and have an internal active bias. All devices are 100% RF and DC tested  
Specifications  
Symbol  
Parameters  
Gain  
Units  
dB  
Freq.  
Min.  
Typ.  
Max.  
900 MHz  
1900 MHz  
2140 MHz  
2550 MHz  
19.0  
13.8  
13.1  
11.5  
S21  
900 MHz  
1900 MHz  
2140 MHz  
2550 MHz  
-17  
-17  
-19  
-19  
S11  
S22  
Input Return Loss  
Output Return Loss  
dB  
dB  
900 MHz  
1900 MHz  
2140 MHz  
2550 MHz  
-15  
-18  
-17  
-17  
900 MHz  
1900 MHz  
2140 MHz  
2550 MHz  
30.0  
30.0  
29.5  
28.3  
Output Power @1dB  
compression  
P1dB  
OIP3  
NF  
dBm  
dBm  
dB  
900 MHz  
1900 MHz  
2140 MHz  
2550 MHz  
45  
44  
45  
Output Third Order  
intercept  
42.5  
900 MHz  
1900 MHz  
2140 MHz  
2550 MHz  
4.1  
3.9  
4.0  
3.9  
Noise Figure  
V / I  
Rth  
Tj  
Device voltage / current  
V/mA  
°C/W  
°C  
5/260  
Thermal Resistance  
36  
Junction Temperature  
133  
Test Conditions : T=25°C, Supply Voltage=+5V, 50ohm System, OIP3 measured with two tones at an output power of +9dBm/tone separated by 1MHz.  
http://www.prewell.com  
January 2007  
1
Prelim inary Data Sheet  

与PH530-SOT23相关器件

型号 品牌 获取价格 描述 数据表
PH5330 NXP

获取价格

N-channel enhancement mode field-effect transistor
PH5330E NXP

获取价格

N-channel TrenchMOS logic level FET
PH5415 NXP

获取价格

TRANSISTOR 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Sm
PH5415-AMMO NXP

获取价格

TRANSISTOR 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Sm
PH5415-T/R NXP

获取价格

TRANSISTOR 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Sm
PH5416 NXP

获取价格

PNP high-voltage transistor
PH5416-AMMO NXP

获取价格

TRANSISTOR 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Sm
PH5416-T/R NXP

获取价格

TRANSISTOR 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Sm
PH5502B2NA1-E4 RENESAS

获取价格

Ambient Illuminance Sensor
PH5503A2NA1 RENESAS

获取价格

Ambient Illuminance Sensor