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PH3475S PDF预览

PH3475S

更新时间: 2024-11-21 20:11:03
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
12页 92K
描述
TRANSISTOR 28 A, 75 V, 0.0638 ohm, N-CHANNEL, Si, POWER, MOSFET, LFPAK, 4 PIN, FET General Purpose Power

PH3475S 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.84外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:75 V
最大漏极电流 (Abs) (ID):28 A最大漏极电流 (ID):28 A
最大漏源导通电阻:0.0638 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):50 W
最大脉冲漏极电流 (IDM):112 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管元件材料:SILICONBase Number Matches:1

PH3475S 数据手册

 浏览型号PH3475S的Datasheet PDF文件第2页浏览型号PH3475S的Datasheet PDF文件第3页浏览型号PH3475S的Datasheet PDF文件第4页浏览型号PH3475S的Datasheet PDF文件第5页浏览型号PH3475S的Datasheet PDF文件第6页浏览型号PH3475S的Datasheet PDF文件第7页 
PH3475S  
N-channel TrenchMOS FET  
Rev. 01 — 27 February 2006  
Preliminary data sheet  
1. Product profile  
1.1 General description  
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using  
TrenchMOS technology.  
1.2 Features  
High threshold level  
Low thermal resistance  
Low on-state resistance  
Surface-mounted package  
1.3 Applications  
DC motor control  
General purpose power switching  
1.4 Quick reference data  
VDS 75 V  
ID 28 A  
RDSon 34.5 mΩ  
QGD = 11.4 nC (typ)  
2. Pinning information  
Table 1:  
Pin  
Pinning  
Description  
Simplified outline  
Symbol  
1, 2, 3  
4
source (S)  
D
S
mb  
gate (G)  
mb  
mounting base; connected to drain (D)  
G
mbb076  
1
2 3 4  
SOT669 (LFPAK)  
 
 
 
 
 
 

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