Datasheet > PH28F640W30TD85

PH28F640W30TD85

更新时间： 2024-09-26 10:29:27

品牌	Logo	应用领域
恒忆 - NUMONYX		内存集成电路闪存
页数	文件大小	规格书
102页	1395K
描述
Flash, 4MX16, 85ns, PBGA56,

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数据手册

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PH28F640W30TD85 数据手册

Numonyx™ Wireless Flash Memory (W30)

28F640W30, 28F320W30, 28F128W30

Datasheet

Product Features

High Performance Read-While-Write/Erase

— Burst Frequency at 40 MHz

Flash Architecture

— Multiple 4-Mbit Partitions

— Dual Operation: RWW or RWE

— Parameter Block Size = 4-Kword

— Main block size = 32-Kword

— Top or Bottom Parameter Blocks

Flash Security

— 70 ns Initial Access Speed

— 25 ns Page-Mode Read Speed

— 20 ns Burst-Mode Read Speed

— Burst-Mode and Page-Mode in All Blocks

and across All Partition Boundaries

— Burst Suspend Feature

— 128-bit Protection Register: 64 Unique

Device Identifier Bits; 64 User OTP

Protection Register Bits

— Enhanced Factory Programming:

3.5 µs per Word Program Time

— Programmable WAIT Signal Polarity

Flash Power

— Absolute Write Protection with V_PPat

Ground

— Program and Erase Lockout during Power

Transitions

— Individual and Instantaneous Block

Locking/Unlocking with Lock-Down

— V_CC= 1.70 V – 1.90 V

— V_CCQ= 2.20 V – 3.30 V

— Standby Current (130 nm) = 8 µA (typ.)

— Read Current = 7 mA

(4 word burst, typical)

Density and Packaging

— 130 nm: 32Mb, 64Mb, and 128Mb in VF

BGA Package; 64Mb, 128Mb in QUAD+

Package

— 180 nm: 32Mb and 128Mb Densities in VF

BGA Package; 64Mb Density in µBGA*

Package

Flash Software

— 5 µs/9 µs (typ.) Program/Erase Suspend

Latency Time

— Numonyx™ Flash Data Integrator (FDI) and

Common Flash Interface (CFI) Compatible

Quality and Reliability

— 56 Active Ball Matrix, 0.75 mm Ball-Pitch

— 16-bit Data Bus

— Operating Temperature:

–40 °C to +85 °C

— 100K Minimum Erase Cycles

— 130 nm ETOX™ VIII Process

— 180 nm ETOX™ VII Process

Order Number: 290702-13

November 2007

12 3 4 5 6 7...102

中文翻译

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