Datasheet > PH1090-550S

PH1090-550S

更新时间： 2024-09-14 14:55:59

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描述
Bipolar

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数据手册
替代型号

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PH1090-550S 数据手册

PH1090-550S

Avionics Pulsed Power Transistor

550 W, 1090 MHz, 10 µs Pulse, 1% Duty

Rev. V1

Outline Drawing

Features



NPN silicon microwave power transistors

Common base configuration

Broadband Class C operation

High efficiency inter-digitized geometry

Diffused emitter ballasting resistors

Gold metallization system

Internal input and output impedance matching

Hermetic metal/ceramic package

RoHS Compliant

Absolute Maximum Ratings at 25°C

Parameter

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V_CES

V_EBO

I_C

Rating

Units

3.0

Collector Current (Peak)

Power Dissipation @ +25°C

Storage Temperature

P_TOT

T_STG

T_J

3.5

°C

-65 to +200

200

Junction Temperature

°C

Electrical Specifications: T_C= 25 ± 5°C (Room Ambient )

Parameter

Test Conditions

Frequency

Symbol

Min

Max Units

Collector-Emitter Breakdown Voltage I_C= 250mA

BV_CES

I_CES

R_TH(JC)

P_IN

°C/W

Collector-Emitter Leakage Current

Thermal Resistance

Input Power

V_CE= 50V

Vcc = 50V, Pout = 550W

F = 1090 MHz

0.05

100

F = 1090 MHz

Power Gain

G_P

7.4

Collector Efficiency

Input Return Loss

_C

-9

Load Mismatch Tolerance

Load Mismatch Stability

VSWR-T

VSWR-S

10:1

1.5:1

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

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PH1090-550S 替代型号

型号	品牌	替代类型	描述	数据表
AVF600	ASI	功能相似	NPN SILICON RF POWER TRANSISTOR

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