Datasheet > PGP10N080

PGP10N080

更新时间： 2025-07-19 19:55:03

品牌	Logo	应用领域
金誉半导体 - HTSEMI		栅
页数	文件大小	规格书
6页	698K
描述
封装形式 : TO-220; 工艺 : 屏蔽栅型; 沟道类型 : 单N; 防静电ESD : 否; 漏源耐压 Vds(V) : 100.000; 栅源耐压 Vgs(V) : ±20; 阈值电压 Vt

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中文翻译

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数据手册

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PGP10N080 数据手册

PGP10N080

100V/80A N-Channel Advanced Power MOSFET

Features

BVDSS

100

• Fast switching

• Low RDS(on) & FOM

• Low Gate Charge

RDSON@VGS=10V

RDSON@VGS=4.5V

6.3

8.8

mΩ

Applications

• High Freuency Switching

• Synchronous Rectification

TO-220

Order Information

Product

Package

Marking

Tube

Carton

PGP10N080

TO-220

PGP10N080

50PCS

5000PCS

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (TC=25°C Unless Otherwise Noted)

Drain-Source Breakdown Voltage

Gate-Source Voltage

100

V_(BR)DSS

V_GS

±20

150

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

°C

-55 to 150

STG

TC =25°C

Mounted on Large Heat Sink

Single Pulse Avalanche Energy (Note1)

EAS

210

240

Pulse Drain Current Tested (Sillicon Limit) (Note2) TC =25°C

Continuous Drain current

TC =25°C

Maximum Power Dissipation

110

1.14

Thermal Resistance Junction−to−Case (Note3)

°C/W

θJc

www. htsemi. com

V2.0

JinYu

Semiconductor

2022/12

12 3 4 5 6

中文翻译

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