Datasheet > PG3510HEA

PG3510HEA

更新时间： 2024-09-14 17:15:35

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
6页	416K
描述
PDFN 3x3

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中文翻译

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数据手册

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PG3510HEA 数据手册

PG3510HEA

PDFN 3x3P

N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

100V

R_DS(ON)

I_D

15A

35mΩ

D1 D1 D2 D2

G. GATE

D. DRAIN

S. SOURCE

100% UIS Tested

100% Rg Tested

S1 G1 S2

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

100

±20

UNITS

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current

Pulsed Drain Current¹

Continuous Drain Current

I_D

I_DM

I_D

T_C= 100 °C

9.7

T_A= 25 °C

T_A= 70 °C

4.8

3.9

Avalanche Current

Avalanche Energy

I_AS

L = 1mH

E_AS

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

17.8

7.1

Power Dissipation

Power Dissipation³

P_D

1.7

P_D

1.1

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

M-7-4

REV1.0

12 3 4 5 6

中文翻译

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